Courses of Instruction

The terms indicated are expected but are not guaranteed. For the courses offered during any given term, consult the Schedule of Classes.

Materials Science (MASC)

110L Materials Science (4, FaSp) Chemical bonding and structure in crystalline, amorphous, and molecular solids; tendency and mechanisms for chemical change; homogeneous and heterogeneous equilibria. Prerequisite: high school chemistry.

350 Design, Synthesis and Processing of Engineering Materials (3) Structure, properties, synthesis, processing and design of metallic, ceramic, polymeric, electronic, photonic, composite, nanophase and biomaterials; nanostructures, microfabrication and smart materials. Prerequisite: CHEM 105a or MASC 110L, PHYS 152.

437 Fundamentals of Solid State (3) Atomic theory; wave mechanics; crystal structure; lattice vibrations; elasticity theory; free electron and tight bonding approximations. Prerequisite: MASC 110L or EE 338, PHYS 153L, and MATH 445.

438L Processing for Microelectronics (3) Applications and electrical evaluation of selected processes used in electronic microfabrication. Prerequisite: MASC 110L, EE 338.

439 Principles of Semiconductor Processing (3) Principles relevant to semiconductor processing are covered. Topics include bulk and epitaxial crystal growth, photolithography, evaporation, sputtering, etching, oxidation, alloying, and ion implantation. Prerequisite: MASC 110L, EE 338.

471 Applied Quantum Mechanics for Engineers (3) (Enroll in EE 471)

472 Polymer Science and Engineering (3) (Enroll in CHE 472)

475 Physical Properties of Polymers (3) (Enroll in CHE 475)

476 Chemical Engineering Materials (3) (Enroll in CHE 476)

478 Plastic Materials (3) (Enroll in CHE 478)

501 Solid State (3, Sp) Atomic structure, bonding in covalent, ionic and Van der Waals crystals, Brillouin zones, lattices, diffraction, electronic states, lattice vibrations, specific heat, electrical conductivity, and magnetism. Prerequisite: EE 539.

502 Advanced Solid State (3, Fa) Semiconductors, dielectrics and metals, thermoelectric effects, magnetism, magnetic resonance and superconductivity. Prerequisite: MASC 501.

503 Thermodynamics of Materials (3, Fa) Classical thermodynamics, chemical potential, pure phases and mixtures; interphase relationships; binary and ternary solutions; free energy and activity; galvanic cell, electrochemical potential and Pourbaix diagram.

504 Diffusion and Phase Equilibria (3, Sp) Phase equilibria; phase diagrams; diffusion; planar defects; nucleation and growth; spinodal decomposition; phase transformation. Prerequisite: MASC 503.

505 Crystals and Anisotropy (3, Fa) Stereographic projection; Laue back reflection method; crystal orientation; line and planar crystalline defects; tensors; susceptibility; permeability and permittivity; stress and strain; piezoelectricity; elasticity.

506 Semiconductor Physics (3, Fa) (Enroll in EE 506)

507 Magnetic and Dielectric Properties of Materials (3) Definitions, properties of field quantities, electric and magnetic energy; exchange coupling; ferro-, ferri-, and antiferromagnetism; ferro-electricity; crystalline anisotropy; permeability; dielectric constants; resonance; spin waves; relaxation. Prerequisite: MASC 502.

508 Imperfections in Solids (3) Types of imperfections; point defects, dislocations; effects on optical, electrical, magnetic, and mechanical properties of solids; phase equilibria involving point defects; imperfection pairing; intersolubility effects. Prerequisite: MASC 502 and MASC 503.

509 Phase Transformations (3) Thermodynamics and kinetics of nucleation and growth, crystallographic processes in diffusional transformations, precipitation from solid solutions, eutectoid decomposition, cellular phase separation, ordering reactions, diffusionless transformations. Prerequisite: MASC 504.

510 Surface and Interface Phenomena (3) Behavior of solid surfaces, solid-vacuum and solid-solid interfaces and their applications. Study of electronic structure, kinetic and dynamic behavior of surface phenomena. Prerequisite: MASC 501, MASC 506.

511 Materials Preparation (3) Principles and techniques of materials preparation; purification, crystal growth from liquid and vapor phases, sintering. Prerequisite: MASC 504 or MASC 509.

512 Epitaxial Growth (3) Epitaxy, coherence, incoherence and pseudomorphism; thermodynamic approaches, Wilson-Frenkel law, kinetic equation approach, nucleation and continuous growth mechanisms, cluster dynamics, lattice mismatch and misfit dislocations. Prerequisite: MASC 501, MASC 503.

513 Multilayered Materials and Properties (3) Fabrication methods, structural determination via X-ray and electron diffraction, electrical behavior, optical properties via absorption, luminescence, and light scattering. Prerequisite: MASC 501, MASC 506.

518 Semiconductor Materials for Devices (3, Sp) Choice of materials systems, thermodynamics, kinetics and methods of bulk and epitaxial crystal growth of semiconductors and their alloys for electronic and optoelectronic devices. Prerequisite: an undergraduate course in semiconductor device physics or MASC 501 as a corequisite.

521 Corrosion Science (3) Chemical thermodynamics of corrosion; electrochemical mechanisms; kinetics of electrode reactions; passivity; galvanic couples; localized corrosion; stress corrosion cracking; corrosion fatigue; corrosion inhibition; atmospheric corrosion.

522 Corrosion Technology (3) Corrosion monitoring and control; anodic and cathodic protection; protective coatings; corrosion inhibitors; alloying; surface modification. Prerequisite: MASC 521.

523 Principles of Electrochemical Engineering (3) Electrochemical techniques; mass, charge, and heat transfer; electrochemical thermodynamics and electrode kinetics; electrochemical reactors; optimization; materials and corrosion; experimental modeling of industrial processes.

534 Materials Characterization (3, Fa) Characterization of solids by optical microscopy, electron microscopy, (TEM, SEM) and elemental and structural analysis (EPMA, ESCA, AES, SIMS, HEED, LEED, SED, etc.).

535 Analytical Electron Microscopy (3) Specimen-electron beam interactions; electron diffraction and image formation of thin crystals. Kinematic and dynamic theory; scanning techniques; convergent beam diffraction; microanalysis; specialized techniques.

536L Analytical Electron Microscopy Laboratory (3) Introduction to transmission electron microscopy; instrument calibration; image dislocations; precipitates; grain boundaries and stacking faults; lattice fringe imaging; microanalysis by X-ray and electron spectroscopy. Project. Prerequisite: MASC 535.

539 Engineering Quantum Mechanics (3) (Enroll in EE 539)

548 Rheology of Liquids and Solids (3) (Enroll in CHE 548)

559 Creep (3) (Enroll in ME 559)

560 Fatigue and Fracture (3) (Enroll in ME 560)

561 Dislocation Theory and Applications (3, Sp) Elasticity theory; types, sources, motion, interaction of dislocations; stress fields and strain energies; partial dislocations and stacking faults; principles of work-hardening.

563 Dislocation Mechanics (3) Athermal and thermally-activated flow; deformation mechanisms; strengthening processes; solid solution and dispersion hardening; effect of impurity clouds; ordering phenomena; diffusion-controlled processes. Prerequisite: MASC 561.

564 Composite Materials (3, Fa) Fundamental and applied aspects of composites, with emphasis on basic mechanics, fracture, and failure criteria. Includes materials issues and fabrication technology.

572 Principles of Polymer Morphology (3) (Enroll in CHE 572)

583 Materials Selection (3) (Enroll in ME 583)

584 Fracture Mechanics and Mechanisms (3) (Enroll in ME 584)

590 Directed Research (1-12) Research leading to the master's degree. Maximum units which may be applied to the degree to be determined by the department. Graded CR/NC.

594abz Master's Thesis (2-2-0) For the master's degree. Credit on acceptance of thesis. Graded IP/CR/NC.

598 Materials Science Seminar (1) Seminar in Materials Science research. To be taken only once for graduate credit.

599 Special Topics (2-4, max 9)

601 Semiconductor Devices (3) (Enroll in EE 601)

606 Nonequilibrium Processes in Semiconductors (3, Sp) (Enroll in EE 606)

607 Electronic and Optical Properties of Semiconductor Quantum Wells and Superlattices (3) Quantum well potential and particle confinement, electron-electron, electron-phonon, and electron-impurity interactions, transport, magneto-transport, optical and magneto-optical properties, collective modes. Prerequisite: MASC 501, MASC 506.

610 Molecular Beam Epitaxy (3) Basic principles, ultra high vacuum, machine considerations, source purity and calibrations temperature measurements, surface morphology and chemistry, growth procedures, III-V, II-VI and silicon MBE. Prerequisite: MASC 501, MASC 503.

690 Directed Research (1-4, max 8) Laboratory study of specific problems by candidates for the degree Engineer in Materials Science. Graded CR/NC.

790 Research (1-12) Research leading to the doctorate. Maximum units which may be applied to the degree to be determined by the department. Graded CR/NC.

794abcdz Doctoral Dissertation (2-2-2-2-0) Credit on acceptance of dissertation. Graded IP/CR/NC.

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